Title : 
A high performance Ka-band push-push oscillator design using finite ground cpw structure
         
        
            Author : 
Zou, Yu-Lin ; Chen, I-Shan ; Chiou, Hwann-Kaeo
         
        
            Author_Institution : 
Nat. Central Univ., Taoyuan
         
        
        
        
        
        
            Abstract : 
A Ka-band push-push oscillator and a Ku- band fundamental oscillator designed using GaAs pHEMT 0.15 mum technology are reported in this paper. The use of finite ground CPW structure that enhanced Q value of the passive element and improved the phase noise with the value of -113.2 dBc/Hz at 1 MHz offset of the push-push oscillator. The push-push oscillator achieves an oscillating frequency of 30.3 GHz while exhibiting a maximum output power of -1.5 dBm with the DC power consumption of 29 mW, together with a figure-of-merit (FOM) of -188.2 dBc/Hz at 1 MHz offset.
         
        
            Keywords : 
HEMT integrated circuits; III-V semiconductors; coplanar waveguides; gallium arsenide; microwave oscillators; millimetre wave oscillators; phase noise; figure-of-merit; finite ground CPW structure; fundamental oscillator; pHEMT; passive element; phase noise; push-push oscillator; Circuit topology; Coplanar waveguides; Equivalent circuits; Feedback; Frequency; Impedance; Inductors; Microwave oscillators; PHEMTs; Phase noise; FOM; Ka-band; oscillator; phase noise; push-push;
         
        
        
        
            Conference_Titel : 
Microwave Conference, 2006. APMC 2006. Asia-Pacific
         
        
            Conference_Location : 
Yokohama
         
        
            Print_ISBN : 
978-4-902339-08-6
         
        
            Electronic_ISBN : 
978-4-902339-11-6
         
        
        
            DOI : 
10.1109/APMC.2006.4429524