RESET-first Resistance Switching Mechanism of HfO2 films with Ti electrode

Author

Kim, Jonggi ; Mok, In-Su ; Lee, Sunghoon ; Lee, Kyumin ; Sohn, Hyunchul

Author_Institution

Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

3

Abstract

RESET-first resistive switching mechanism in HfO_2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO₂ film. The redox phenomenon from Ti/HfO₂ to TiO_x/HfO_2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO₂ to TiOx/HfO_2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.

Keywords

X-ray chemical analysis; X-ray photoelectron spectra; annealing; electrodes; hafnium compounds; ions; oxidation; random-access storage; reduction (chemical); titanium; EDX; RESET; Ti-HfO₂; X-ray photoelectron spectroscopy; annealed film; bipolar resistive switching behavior; electrode; external electrical bias; high angle annular dark field-scanning transmission electron microscopy; oxygen ion migration; post-annealing temperature; redox reaction; resistance switching mechanism; resistive random access memory; Annealing; Electrodes; Films; Hafnium compounds; Nickel; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2012 IEEE International

Conference_Location

San Jose, CA

ISSN

pending

Print_ISBN

978-1-4673-1138-0

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IITC.2012.6251589

Filename

6251589