DocumentCode :
2760495
Title :
A modeling technique for internally matched bipolar microwave power transistor networks
Author :
Brody, David ; Branner, G.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Volume :
2
fYear :
1994
fDate :
3-5 Aug 1994
Firstpage :
1224
Abstract :
The use of power amplifiers in RF and microwave circuits and their models as used In CAE design software is a topic of considerable interest. In this paper we present a nonlinear network model for an internally matched bipolar “power” transistor (IMBIP). The IMBIP is divided into two networks, modeled separately and then combined to obtain a complete model. Linear and nonlinear comparisons between measured and modeled data are presented
Keywords :
impedance matching; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; nonlinear network analysis; power bipolar transistors; bipolar microwave power transistor networks; internally matched networks; modeling technique; nonlinear network model; Circuits; Computer aided engineering; Electromagnetic heating; Inductance; MOS capacitors; Microwave amplifiers; Microwave circuits; Microwave theory and techniques; Microwave transistors; Packaging; Power amplifiers; Power generation; Power measurement; Power system modeling; Power transistors; Radio frequency; Radiofrequency amplifiers; Software design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on
Conference_Location :
Lafayette, LA
Print_ISBN :
0-7803-2428-5
Type :
conf
DOI :
10.1109/MWSCAS.1994.519029
Filename :
519029
Link To Document :
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