• DocumentCode
    2760615
  • Title

    Electromechanical conversion efficiency of PZT films

  • Author

    Etzold, K.F. ; Roy, R.A. ; Saenger, K.L. ; Cuomo, J.J.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1990
  • fDate
    4-7 Dec 1990
  • Firstpage
    747
  • Abstract
    PZT thin films have been prepared by opposed-target RF-sputtering and laser ablation. The titanium to zirconium ratios were 60/40 and 48/52. The latter films were doped with Fe and Sr (PZT 8). The dielectric constant, polarization, and d33 coefficients were measured. A newly designed quadrature looper was used to acquire the polarization data and d33 was measured with a stabilized interferometer. The dielectric properties (ε and P) were slightly lower but comparable to bulk values. The best d33 was 7.7 (for a 60/40 film). The d33 value for the 48/52 RF-sputtered films was significantly lower than what one would expect from dielectric data. PZT films as-deposited are oriented and exhibit piezoelectric activity before any poling treatment. The material was also difficult to depole
  • Keywords
    dielectric polarisation; electromechanical effects; lead compounds; permittivity; piezoelectric thin films; sputtered coatings; PZT thin films; PZT:Fe, Sr; PbZrO3TiO3; PbZrO3TiO3:Fe,Sr; dielectric constant; electromechanical conversion efficiency; laser ablation; opposed-target RF-sputtering; piezoelectric coefficients; polarization; poling; quadrature looper; stabilized interferometer; Dielectric constant; Dielectric measurements; Dielectric thin films; Iron; Laser ablation; Piezoelectric films; Polarization; Strontium; Titanium; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
  • Conference_Location
    Honolulu, HI
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1990.171465
  • Filename
    171465