• DocumentCode
    2760692
  • Title

    Study on the variation in thermal resistance and junction temperature of GaN based LEDs using thermal transient measurement

  • Author

    Teeba, N. ; Yew, L. Kean ; Keng, L. Chin ; Anithambigai, P. ; Dinash, K. ; Mutharasu, D.

  • Author_Institution
    Sch. of Phys., Univ. Sains Malaysia (USM), Minden, Malaysia
  • fYear
    2011
  • fDate
    19-20 July 2011
  • Firstpage
    310
  • Lastpage
    314
  • Abstract
    Proper heat management in solid state lighting (SSL) is vital to enhance its efficiency and reliability. The ease of heat flow through the LED package was described in terms of the thermal resistance, Rth. In this study white and green LEDs were used to investigate the variation in junction temperature and junction-to-ambient thermal resistance, RthJA. It was reported that the green LED always shows higher junction temperature and thermal resistance compared to the white LED. This is due to current crowding effect at the p-n junction of the green LED. At 700mA, the RthJA of green LED was increased about 3KW compare with white LED. Furthermore, the die attach quality also influences the temperature rise and thermal resistance of the LED packages. Due to poor die attach, the RthJA rises about 7K/W when compared with good die attach sample.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; p-n junctions; thermal resistance; wide band gap semiconductors; GaN; GaN based LED; LED package; current 700 mA; die attach quality; heat flow; heat management; junction temperature; junction-to-ambient thermal resistance; p-n junction; solid state lighting; temperature rise; thermal transient measurement; Electronic packaging thermal management; Heating; Junctions; Light emitting diodes; Temperature measurement; Thermal resistance; Structure function; Thermal transient measurement; junction temperature; junction-to-ambient thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4577-0145-0
  • Type

    conf

  • DOI
    10.1109/ASQED.2011.6111766
  • Filename
    6111766