Title :
Optical characteristics of new semiconductor alloy; GaAs1-x Bix
Author_Institution :
Kyoto Inst. of Technol., Japan
Abstract :
New III-V alloy semiconductors consisting of semiconductor and semimetal components are expected to have temperature-insensitive band gaps, which are very important for semiconductor lasers whose wavelength stays nearly constant through ambient temperature variations. The author has been trying to create Bi-containing semiconductor alloy, GaInAsBi for this purpose. One of the constituent alloys, InAs1-xBi x has been reported by MOVPE growth both at atmospheric and low pressures. Another constituent alloy, GaAs1-xBix has been successfully created by low-pressure MOVPE growth recently by our group. In this paper, optical characterization of the new alloy material, GaAs1-xBix is reported
Keywords :
III-V semiconductors; X-ray diffraction; energy gap; gallium arsenide; photoluminescence; semiconductor epitaxial layers; vapour phase epitaxial growth; GaAs1-xBix; GaAsBi; III-V alloy semiconductor; MOVPE growth; X-ray diffraction; band gap; optical characteristics; photoluminescence; Atmospheric waves; Bismuth; Epitaxial growth; Epitaxial layers; Gallium arsenide; III-V semiconductor materials; Photonic band gap; Semiconductor lasers; Semiconductor materials; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894090
