• DocumentCode
    2760724
  • Title

    Optical characteristics of new semiconductor alloy; GaAs1-x Bix

  • Author

    Oe, Kunishige

  • Author_Institution
    Kyoto Inst. of Technol., Japan
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    788
  • Abstract
    New III-V alloy semiconductors consisting of semiconductor and semimetal components are expected to have temperature-insensitive band gaps, which are very important for semiconductor lasers whose wavelength stays nearly constant through ambient temperature variations. The author has been trying to create Bi-containing semiconductor alloy, GaInAsBi for this purpose. One of the constituent alloys, InAs1-xBi x has been reported by MOVPE growth both at atmospheric and low pressures. Another constituent alloy, GaAs1-xBix has been successfully created by low-pressure MOVPE growth recently by our group. In this paper, optical characterization of the new alloy material, GaAs1-xBix is reported
  • Keywords
    III-V semiconductors; X-ray diffraction; energy gap; gallium arsenide; photoluminescence; semiconductor epitaxial layers; vapour phase epitaxial growth; GaAs1-xBix; GaAsBi; III-V alloy semiconductor; MOVPE growth; X-ray diffraction; band gap; optical characteristics; photoluminescence; Atmospheric waves; Bismuth; Epitaxial growth; Epitaxial layers; Gallium arsenide; III-V semiconductor materials; Photonic band gap; Semiconductor lasers; Semiconductor materials; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
  • Conference_Location
    Rio Grande
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5947-X
  • Type

    conf

  • DOI
    10.1109/LEOS.2000.894090
  • Filename
    894090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2760724