Title :
Series anti-parallel diode linearizer for class-B power amplifiers with a gain expansion
Author :
Yamauchi, Kazuhisa ; Noto, Hifumi ; Ishizaka, Satoru ; Hamamatsu, Yoshihiro ; Nakayama, Masatoshi ; Isota, Yoji
Author_Institution :
MITSUBISHI Electr. Corp., Kanagawa
Abstract :
A series anti-parallel diode linearizer (SAPDL) for class-B power amplifiers with a gain expansion has been proposed. SAPDL has the characteristic whose gain is decreased in the middle power region and is increased in the saturated region. In this paper, the operation principle of SAPDL is made clear. SAPDL is applied for a class-B UHF-band power amplifier with a gain expansion. An improvement of adjacent channel leakage power ratio (ACPR) of 4 dB and power added efficiency (PAE) of 6 % has been achieved for the OFDM signal of the 6 MHz bandwidth.
Keywords :
OFDM modulation; UHF power amplifiers; diodes; OFDM signal; adjacent channel leakage power ratio; bandwidth 6 MHz; class-B UHF-band power amplifier; gain expansion; power added efficiency; series anti-parallel diode linearizer; Bandwidth; Equivalent circuits; High power amplifiers; Microwave amplifiers; Mobile communication; OFDM; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Schottky diodes; communications; diode; distortion; linearizer; nonlinear; power amplifiers;
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
DOI :
10.1109/APMC.2006.4429554
