A study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials

In this work, we study the optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials experimentally with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. Specifically, the effects of the aluminum composition in wells of the AlGaInP MQW structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices are investigated. The optical properties of the blue and ultraviolet InGaN quantum well devices have also been investigated. The effects of the indium composition in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are studied numerically with the Lastip simulation program