DocumentCode :
2760826
Title :
Synthesis and Characterization of Ultrathin Si:SiO2 Thin Films for Photovoltaic Applications
Author :
Murthy, Hari ; Kumar, Anil ; Jayavel, R.
Author_Institution :
Centre for Nanosci. & Technol., Anna Univ., Chennai, India
fYear :
2011
fDate :
8-10 Dec. 2011
Firstpage :
1
Lastpage :
5
Abstract :
In this research paper, the optical properties of ultrathin Si:SiO2 films deposited by Plasma-enhanced chemical vapour deposition (PECVD) were studied. The main purpose of this research was to observe the transmittance and absorbance of multiple layers of Si and SiO2 alternatively deposited on the substrate for photovoltaic applications. The optical properties that were studied include UV-Visible spectroscopy and photoluminsence. Analysis of the UV Visible spectroscopy revealed a band gap of 2.65eV for the multilayered Si:SiO2 films which was confirmed by the data obtained from photoluminescence.
Keywords :
photoluminescence; plasma CVD; solar cells; thin films; ultraviolet spectroscopy; visible spectroscopy; PECVD; Si:SiO2; UV-visible spectroscopy; optical properties; photoluminsence; photovoltaic applications; plasma-enhanced chemical vapour deposition; silica layer absorbance; silicon layer transmittance; thin film characterization; thin film synthesis; Absorption; Films; Photonic band gap; Photonics; Silicon; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscience, Technology and Societal Implications (NSTSI), 2011 International Conference on
Conference_Location :
Bhubaneswar
Print_ISBN :
978-1-4577-2035-2
Type :
conf
DOI :
10.1109/NSTSI.2011.6111778
Filename :
6111778
Link To Document :
بازگشت