Title :
850-nm VCSEL arrays for optical interconnection and transmission applications
Author :
Kagawa, Toshiaki ; Ohiso, Yoshitaka ; Tateno, Kouta ; Tadanaga, Osamu ; Uenohara, Hiroyuki ; Amano, Chikara
Abstract :
A VCSEL array at a wavelength of 850 nm for application to optical parallel interconnection was developed. A uniform array on a p-type substrate was fabricated and installed in a 60-Gps-class parallel-interconnection module. A high polarization control was obtained for devices with strained quantum wells grown on a (311)B substrate. An index-guided semiconductor buried structure was fabricated to control the lateral mode. An air-post VCSEL array was fabricated on a (100) p-type substrate so that it could be driven by a bipolar transistor IC
Keywords :
MOCVD; infrared sources; laser modes; laser transitions; optical fabrication; optical interconnections; parallel architectures; quantum well lasers; semiconductor laser arrays; (100) p-type substrate; (311)B substrate; 850-nm VCSEL arrays; Gps-class parallel-interconnection module; air-post VCSEL array; bipolar transistor IC; driver circuits; high polarization control; index-guided semiconductor buried structure; lateral mode; optical interconnection; optical parallel interconnection; p-type substrate; strained quantum wells; Anisotropic magnetoresistance; Bit error rate; Gallium arsenide; Laboratories; Optical arrays; Optical interconnections; Optical polarization; Optical receivers; Optical refraction; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894096
