A unified model for the 1/f noise induced by threading dislocation in strained-Si pMOSFETs

Author

Hong-dong Yang ; Jing-chun Li ; Mo-hua Yang

Author_Institution

State Key Lab. of Electron.Thin Films & Integrated Devices, Chengdu

fYear

2007

fDate

11-13 July 2007

Firstpage

563

Lastpage

565

Abstract

A unified accurate 1/f noise model is developed for the strained-Si pMOSFETs with threading dislocations. With the fluctuations of carrier number and mobility taken into account simultaneously, the deep-submicrometre devices are investigated. The numerical results display that the area of the gate is key factor for the device´s noise characteristics and that a critical gate area can be defined to evaluate the effects of the threading dislocations. And the 1/f noise induced by threading dislocation shows different characteristics at three conditions respectively. The unified model is also clearly reveal the physical mechanism of 1/f noise generated from threading dislocation definitely and available for deep-submicrometre device simulation, design and reliability applications.

Keywords

1/f noise; MOSFET; carrier mobility; dislocations; semiconductor device models; semiconductor device noise; semiconductor device reliability; silicon; 1/f noise model; Si; carrier mobility fluctuation; carrier number fluctuation; deep-submicrometre device simulation; device reliability; strained-silicon pMOSFET design; threading dislocation; Artificial intelligence; Logic gates; MOSFET circuits; MOSFETs; Message systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on

Conference_Location

Kokura

Print_ISBN

978-1-4244-1473-4

Type

conf

DOI

10.1109/ICCCAS.2007.6251621

Filename

6251621