Title :
A unified model for the 1/f noise induced by threading dislocation in strained-Si pMOSFETs
Author :
Hong-dong Yang ; Jing-chun Li ; Mo-hua Yang
Author_Institution :
State Key Lab. of Electron.Thin Films & Integrated Devices, Chengdu
Abstract :
A unified accurate 1/f noise model is developed for the strained-Si pMOSFETs with threading dislocations. With the fluctuations of carrier number and mobility taken into account simultaneously, the deep-submicrometre devices are investigated. The numerical results display that the area of the gate is key factor for the device´s noise characteristics and that a critical gate area can be defined to evaluate the effects of the threading dislocations. And the 1/f noise induced by threading dislocation shows different characteristics at three conditions respectively. The unified model is also clearly reveal the physical mechanism of 1/f noise generated from threading dislocation definitely and available for deep-submicrometre device simulation, design and reliability applications.
Keywords :
1/f noise; MOSFET; carrier mobility; dislocations; semiconductor device models; semiconductor device noise; semiconductor device reliability; silicon; 1/f noise model; Si; carrier mobility fluctuation; carrier number fluctuation; deep-submicrometre device simulation; device reliability; strained-silicon pMOSFET design; threading dislocation; Artificial intelligence; Logic gates; MOSFET circuits; MOSFETs; Message systems;
Conference_Titel :
Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on
Conference_Location :
Kokura
Print_ISBN :
978-1-4244-1473-4
DOI :
10.1109/ICCCAS.2007.6251621
