Title :
InGaAs/GaAs photorefractive p-i-n diode
Author :
Iwamoto, S. ; Taketomi, S. ; Suzuki, Kenji ; Nishioka, M. ; Someya, Takao ; Arakawa, Y. ; Shimura, T. ; Kuroda, K.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
The MBE fabrication of an InGaAs-GaAs MQW photorefractive p-i-n diode and its photorefractive properties are reported. We also discuss the difference in photorefractive performance between p-i-n diode and previous dielectric buffered devices
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; multiwave mixing; p-i-n photodiodes; photorefractive materials; quantum confined Stark effect; semiconductor quantum wells; InGaAs-GaAs; InGaAs-GaAs MQW photorefractive p-i-n diode; InGaAs/GaAs photorefractive p-i-n diode; MBE fabrication; dielectric buffered devices; p-i-n diode; photorefractive properties; Absorption; Diffraction; Frequency; Gallium arsenide; Gratings; Indium gallium arsenide; P-i-n diodes; Photorefractive materials; Quantum well devices; Spatial resolution;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894108
