Title :
Development of highly reliable Cu wiring of L/S=1/1µm for chip to chip interconnection
Author :
Kanki, Tsuyoshi ; Ikeda, Junya ; Kobayashi, Yasushi ; Suda, Shoichi ; Nakata, Yoshihiro ; Nakamura, Tomoji
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Highly dense and reliable Cu wiring of L/S=1/1μm for chip to chip interconnection was developed, by improving the semi-additive process To meet the reliability requirements, a mechanism for leakage failures in the HAST environment was identified, and the improved processes for suppressing Cu corrosion and diffusion were established by reducing halogen ions and covering with metal cap barriers.
Keywords :
copper; diffusion; halogens; metallisation; semiconductor device reliability; wiring; Cu; HAST environment; chip interconnection; diffusion; halogen ions; high reliable wiring; metal cap barriers; reliability; Corrosion; Films; Ions; Reliability; Resins; Wires; Wiring;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251635
