The application of a novel intermixing technique for multi-bandgap integration of InGaAs/AlInGaAs

Author

Liu, X.F. ; Qiu, B.C. ; Ke, M.L. ; Bryce, A.C. ; Marsh, J.H.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

2

fYear

2000

fDate

2000

Firstpage

846

Abstract

Here, for the first time, we report the application of this novel technique to a dual wavelength ridge waveguide laser array and an integrated 2x2 cross point optical switch in InGaAs-AlInGaAs material. In the fabrication, a cap layer of 200 nm of PECVD SiO₂ was deposited onto InGaAs-AlInGaAs multi-quantum-well samples

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical fabrication; optical switches; plasma CVD; ridge waveguides; semiconductor laser arrays; waveguide lasers; 200 nm; InGaAs-AlInGaAs; InGaAs-AlInGaAs material; InGaAs-AlInGaAs multi-quantum-well samples; PECVD SiO₂; SiO₂; dual wavelength ridge waveguide laser array; integrated 2x2 cross point optical switch; intermixing technique; multi-bandgap integration; Indium gallium arsenide; Optical arrays; Optical switches; Optical waveguides; Photonic band gap; Pulsed laser deposition; Quantum well lasers; Semiconductor laser arrays; Semiconductor optical amplifiers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.894119

Filename

894119