Title :
GaAs Solar Cell: Effect of P-Layer Thickness on Device Parameter
Author :
Mangal, Sutanu ; Banerji, Pallab
Author_Institution :
Mater. Sci. Centre, Indian Inst. of Technol. Kharagpur, Kharagpur, India
Abstract :
p-layer thickness dependence ideality factor, series resistance and barrier height had been investigated of a p-n junction GaAs diode. Solar cell response under sun light illumination was taken and it was found that efficiency, fill factor and short circuit current increased with the thickness of p-GaAs but after a certain thickness all this parameters decreased with increase in thickness. The efficiency of the cell was reached maximum 12.7% at air mass 1 for a 3 μm p layer thickness.
Keywords :
III-V semiconductors; gallium arsenide; p-n junctions; semiconductor diodes; short-circuit currents; solar cells; -layer thickness dependence ideality factor; GaAs; barrier height; device parameter; efficiency 12.7 percent; fill factor; p-n junction diode; series resistance; short circuit current; size 3 mum; solar cell response; sunlight illumination; Gallium arsenide; Lighting; P-n junctions; Photovoltaic cells; Resistance; Semiconductor diodes; Silicon;
Conference_Titel :
Nanoscience, Technology and Societal Implications (NSTSI), 2011 International Conference on
Conference_Location :
Bhubaneswar
Print_ISBN :
978-1-4577-2035-2
DOI :
10.1109/NSTSI.2011.6111799
