Title :
GaAsSb-based alloys for long-wavelength lasers
Author :
Anan, T. ; Nishi, Kenichi ; Yamada, Mitsuki ; Kurihara, Kaori ; Tokutome, Keiichi ; Kamei, Akio ; Sugou, Shigeo
Author_Institution :
Opt. Interconnection, NEC Corp., Ibaraki, Japan
Abstract :
We will review the growth, structural, and optical properties of GaAsSb QWs and the material gain improvement of lasers using modulation doping in the active region and the state-of-the-art device performance of GaAsSb VCSELs. We grew GaAsSb QWs with GaAs barriers on n-GaAs (100) substrates by using gas-source molecular beam epitaxy (GSMBE) and metal-organic vapor phase epitaxy (MOVPE)
Keywords :
III-V semiconductors; MOCVD; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor doping; surface emitting lasers; vapour phase epitaxial growth; GaAs; GaAs barriers; GaAsSb; GaAsSb QWs; GaAsSb VCSELs; GaAsSb-based alloys; MBE; MOVPE; active region; gas-source molecular beam epitaxy; long-wavelength lasers; material gain improvement; metal-organic vapor phase epitaxy; modulation doping; n-GaAs (100) substrates; optical properties; review; state-of-the-art device performance; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gas lasers; Optical devices; Optical materials; Optical modulation; Performance gain; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894120
