Wafer bonding of 50 mm diameter mirror substrate to AlGaInP light-emitting diode wafer

Author

Seieh, C.H. ; Horng, R.H. ; Huang, M.F. ; Wuu, D.S. ; Peng, W.C. ; Tsai, S.J. ; Liu, J.S.

Author_Institution

Visual Photonics Epitaxy Co. Ltd., Taoyuan, Taiwan

Volume

2

fYear

2000

fDate

2000

Firstpage

854

Abstract

The feasibility of 50-mm wafer bonding AlGaInP LED with mirror substrate has been demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED. Good uniformity and performance have been demonstrated for the wafer bonded LED with mirror structure

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; mirrors; substrates; wafer bonding; 50 mm; AlGaInP; AlGaInP LED; AlGaInP light-emitting diode wafer; absorbing substrate LED; bonding process; good thermal conductivity; joule heating; low temperature; mirror structure; mirror substrate; short thermal treatment duration; wafer bonded LED; wafer bonding; Etching; Gallium arsenide; Light emitting diodes; Mirrors; Quantum well devices; Semiconductor films; Substrates; Thermal conductivity; Voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.894123

Filename

894123