Title :
Mechanical properties of SiCOH film related to CPI and High Load Indentation test of real Cu/Low-k structure with bumps
Author :
Usami, Tatsuya ; Nakamura, Tomoyuki ; Fujimoto, Naoki ; Aizawa, Hirokazu ; Yashima, Iwao ; Fujii, Kunihiro
Author_Institution :
Renesas Electron. Corp., Yamagata, Japan
Abstract :
Relation between mechanical properties of SiCOH film and white bump failures has been investigated. Among these mechanical properties, the fracture toughness of SiCOH film was related to the white bump failures. In addition, to simplify the complex Chip Package Interaction (CPI) tests, we proposed High Load Indentation (HiLI) test as a novel measurement of toughness for a real structure of multilayer Cu/Low-k interconnects with Pb-free bump. We found that the critical load by HiLI test is related to white bump failure.
Keywords :
carbon compounds; copper; indentation; low-k dielectric thin films; silicon compounds; CPI; Cu; HiLI test; Pb-free bump; SiCOH; high load indentation test; mechanical properties; real Cu-low-k structure; Adhesives; Films; Mechanical factors; Nonhomogeneous media; Silicon; Substrates; Young´s modulus;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251640
