Title :
Fused InGaAs/Si avalanche photodetector
Author :
Kang, Y. ; Zhu, Z. ; Zhou, Y. ; Mages, P. ; Baek, J.H. ; Clawson, A.R. ; Lau, S.S. ; Yu, P.K.L. ; Lo, Y.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
We have demonstrated avalanche gain in InGaAs-Si fused PIN photodiode at low bias range. Simulation from a theory based upon the interface states introduced by the fusion process appears to explain the observed gain behavior of the photodiode
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; interface states; p-i-n photodiodes; semiconductor device models; silicon; InGaAs-Si; InGaAs-Si fused PIN photodiode; avalanche gain; fused InGaAs/Si avalanche photodetector; fusion process; gain behavior; interface states; low bias range; Doping; Indium gallium arsenide; Interface states; Large Hadron Collider; PIN photodiodes; Tires;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894124
