Robust low-k film with sub-nm pores and high carbon content for highly reliable Cu/low-k BEOL modules

Author

Inoue, N. ; Tagami, M. ; Ito, F. ; Yamamoto, H. ; Kawahara, J. ; Soda, E. ; Shobha, H. ; Gates, S. ; Cohen, S. ; Liniger, E. ; Madan, A. ; Protzman, J. ; Ryan, E.T. ; Ryan, V. ; Ueki, M. ; Hayashi, Y. ; Spooner, T.

Author_Institution

Renesas Electron., Albany, NY, USA

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

3

Abstract

Critical parameters of low-k films were defined to keep capacitance benefit and TDDB reliability in the scaling BEOL module, according to various analyses. In order to meet the criteria of high carbon content, low porosity with small pores, and high adhesion strength with less adhesion layer, precursor and process were designed for the SiOCH with k~2.5. The benefits in integration and reliability from the newly developed robust low-k film were verified through the trench-first integration of 80 nm-pitch BEOL modules.

Keywords

adhesion; carbon; copper; low-k dielectric thin films; semiconductor device reliability; Cu; TDDB reliability; adhesion layer; high carbon content; high reliable Cu-low-k BEOL module; precursor; robust low-k film; size 80 nm; sub nm pores; trench-first integration; Adhesives; Capacitance; Carbon; Films; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2012 IEEE International

Conference_Location

San Jose, CA

ISSN

pending

Print_ISBN

978-1-4673-1138-0

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IITC.2012.6251641

Filename

6251641