Title :
Inline Low-k damage detection of Cu/Low-k interconnect using micro beam IR method
Author :
Goto, Keisuke ; Oka, Yuichi ; Miura, Naruhisa ; Matsuura, Motoharu ; Asai, Kikuo
Author_Institution :
Process Technol. Div., Renesas Electron. Corp., Hitachinaka, Japan
Abstract :
It has become more serious concern to quantify Low-k damage in Cu/Low-k interconnects. We investigated the relationship between the amount of OH group in Low-k material obtained from micro-beam IR method and the interconnect capacitance. And it was found that there is good correlation among them. Additionally, the micro-beam IR method sensitively detected modifications of amount of OH group for several kinds of treatment processes except for the NH3 plasma treatment prior to Cu diffusion barrier dielectric deposition.
Keywords :
copper; infrared detectors; low-k dielectric thin films; semiconductor device metallisation; Cu-low-k interconnect; NH3 plasma treatment; diffusion barrier dielectric deposition; inline low-k damage detection; interconnect capacitance; micro beam IR method; treatment processes; Capacitance; Correlation; Metals; Plasma measurements; Plasmas; Silicon;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251642
