Title :
Effect of Realistic Inter-CNT Coupling Capacitance in Mixed CNT Bundle
Author :
Sathyakam, P. Uma ; Mallick, P.S.
Author_Institution :
Sch. of Electr. Eng., VIT Univ., Vellore, India
Abstract :
The change of potential across a CNT in a bundle necessitates the need to consider the inter-CNT coupling capacitance in the equivalent circuit of CNT interconnects for VLSI circuits. This paper presents a realistic inter-CNT electrostatic coupling capacitance and tunneling conductance model for this bundle and studied its effects in detail. The equivalent transmission line circuit model of a unit bundle containing one SWCNT and one MWCNT has been shown. This new model is then used to calculate the delay induced by the inter-CNT capacitance and tunneling conductance, which predicts the relative positioning of MW/SWCNTs in mixed CNT bundle.
Keywords :
VLSI; capacitance; carbon nanotubes; equivalent circuits; integrated circuit interconnections; tunnelling; CNT interconnects; MWCNT; SWCNT; VLSI circuits; equivalent circuit; equivalent transmission line circuit model; inter-CNT capacitance; mixed CNT bundle; realistic inter-CNT coupling capacitance; realistic inter-CNT electrostatic coupling capacitance; tunneling conductance model; Carbon nanotubes; Delay; Equivalent circuits; Integrated circuit interconnections; Quantum capacitance; Tunneling;
Conference_Titel :
Nanoscience, Technology and Societal Implications (NSTSI), 2011 International Conference on
Conference_Location :
Bhubaneswar
Print_ISBN :
978-1-4577-2035-2
DOI :
10.1109/NSTSI.2011.6111807
