DocumentCode :
2761420
Title :
Effect of W doping on bipolar resistive switching behavior of TiN/W:NbOx/Pt device
Author :
Lee, Kyumin ; Kim, Jonggi ; Lee, Sunghoon ; Park, Sunghoon ; Sohn, Hyunchul
Author_Institution :
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
In our study, resistive switching characteristics of TiN/ W:NbOx/Pt with tungsten doping concentration are investigated. We demonstrated that an increase of oxygen vacancies with increasing the concentration of W doping in W:NbOx films. The W:NbOx specimens show bipolar resistive switching and switching current could be controlled by tungsten doping concentration in NbOx. It is concluded that oxygen vacancies concentration plays an important role in bipolar resistive switching characteristic of W:NbOx.
Keywords :
niobium compounds; platinum; random-access storage; semiconductor doping; titanium compounds; tungsten; TiN-W:NbOx-Pt; bipolar resistive switching behavior; oxygen vacancies concentration; resistive random access memory; tungsten doping concentration; Doping; Films; Semiconductor device measurement; Switches; Switching circuits; Tin; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
ISSN :
pending
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IITC.2012.6251647
Filename :
6251647
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2761420
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