DocumentCode
2761429
Title
Atomistic method for analysis of electromigration
Author
Ceric, H. ; de Orio, R.L. ; Zisser, W.H. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
3
Abstract
The reliability of interconnects in modern integrated circuits is determined by the magnitude and direction of the effective valence for electromigration (EM). The effective valence depends on local atomistic configurations. In order to study EM on atomistic level an application of ab initio methods is a necessity. In this work a novel method for an ab initio calculation of the effective valence for electromigration is proposed and its application on the analysis of EM behavior is presented.
Keywords
electromigration; integrated circuit reliability; metallisation; EM behavior; ab initio methods; atomistic method; electromigration; integrated circuit reliability; Copper; Electromigration; Force; Grain boundaries; Integrated circuit interconnections; Microscopy; Monte Carlo methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location
San Jose, CA
ISSN
pending
Print_ISBN
978-1-4673-1138-0
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IITC.2012.6251648
Filename
6251648
Link To Document