Title :
Tungsten plug corrosion on B2H6-based nucleation layer induced by WCMP process
Author :
Chen, Kuang-Wei ; Ko, Meng-Tsung ; Chen, Chun-Fu ; Hung, Yung-Tai ; Su, Chin-Ta ; Yang, Ta-Hone ; Chen, Kuang-Chao ; Lu, Chih-Yuan
Author_Institution :
Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan
Abstract :
The topic of this paper is to identify tungsten plug corrosion issue at the interface of barrier metal and W bulk in W-CMP process. Two types of nucleation layers in W-CVD deposition process - SiH4 and B2H6 based were studied. The B2H6 based nucleation W will induce W corrosion. However, SiH4 based nucleation W does not have the issue. The static etch rate, electrochemical properties and removal rate (R.R.) of two types W-CMP slurries and SiH4 and B2H6 based nucleation W were evaluated. It has been demonstrated that the B2H6 based nucleation film has much higher intensity of static etching on various W slurries. The B2H6 based nucleation layer is weak than SiH4 based, and it induces corrosion during W-CMP process.
Keywords :
boron compounds; chemical mechanical polishing; corrosion; metallisation; nucleation; silicon compounds; tungsten; B2H6; SiH4; W; W bulk; W slurries; W-CMP process; barrier metal; electrochemical properties; nucleation layer film; removal rate; static etch rate; tungsten plug corrosion; Corrosion; Electric potential; Etching; Films; Plugs; Slurries; Tungsten;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251649
