• DocumentCode
    2761643
  • Title

    Novel seed layer formation using direct electroless copper deposition on ALD-Ru layer for high aspect ratio TSV

  • Author

    Inoue, F. ; Philipsen, H. ; Radisic, A. ; Armini, S. ; Civale, Y. ; Leunissen, P. ; Shingubara, S.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    High aspect ratio through-Si vias (2 μmφ, AR 15) have been filled without voids on coupon scale by using an electroless deposited Cu seed layer on ALD-Ru. The total Cu overburden, which is ELD and filling Cu, was about 700 nm. In addition, the electroless Cu bath showed good stability during 2 hours with controlling pH to stabilize the deposition process. These results show the feasibility of electroless deposition in TSV processing.
  • Keywords
    copper; electroless deposition; pH control; ruthenium; stability; three-dimensional integrated circuits; ALD-Ru layer; ELD; direct electroless copper deposition; electroless deposited Cu seed layer; high aspect ratio TSV; high aspect ratio through-Si vias; pH control; stability; Adhesives; Copper; Electric potential; Filling; Monitoring; Thermal stability; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2012 IEEE International
  • Conference_Location
    San Jose, CA
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1138-0
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IITC.2012.6251660
  • Filename
    6251660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2761643