Title :
Novel seed layer formation using direct electroless copper deposition on ALD-Ru layer for high aspect ratio TSV
Author :
Inoue, F. ; Philipsen, H. ; Radisic, A. ; Armini, S. ; Civale, Y. ; Leunissen, P. ; Shingubara, S.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
High aspect ratio through-Si vias (2 μmφ, AR 15) have been filled without voids on coupon scale by using an electroless deposited Cu seed layer on ALD-Ru. The total Cu overburden, which is ELD and filling Cu, was about 700 nm. In addition, the electroless Cu bath showed good stability during 2 hours with controlling pH to stabilize the deposition process. These results show the feasibility of electroless deposition in TSV processing.
Keywords :
copper; electroless deposition; pH control; ruthenium; stability; three-dimensional integrated circuits; ALD-Ru layer; ELD; direct electroless copper deposition; electroless deposited Cu seed layer; high aspect ratio TSV; high aspect ratio through-Si vias; pH control; stability; Adhesives; Copper; Electric potential; Filling; Monitoring; Thermal stability; Through-silicon vias;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251660
