• DocumentCode
    2761661
  • Title

    Driving down CIGS cost of ownership with high volume thermal deposition systems

  • Author

    Patrin, John ; Conroy, Chad ; Wen, Jian-gang ; Brown, Doup ; Pfeiffer, Ken ; Fobare, David ; Novak, Jennifer ; Amadon, Jeff ; Metacarpa, Dave

  • Author_Institution
    Veeco Instrum. Inc., St. Paul, MN, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    One of the biggest challenges for high volume copper indium gallium (di)Selenide (CIGS) manufacturing is transitioning the R&D/pilot processes to a low cost high volume manufacturing process. The most important parameters in lowering the manufacturing cost of ownership (CoO) are module efficiency, low materials cost, high throughput and low capital expenditures. Veeco has developed a CIGS thermal deposition system that incorporates a multi-zone deposition system that enables process optimization for high module efficiency and high throughput. Further manufacturing cost reductions have been achieved by incorporating an innovative linear thermal deposition source for copper (Cu), indium (In), gallium (Ga) and selenium (Se). The linear source dramatically increases material utilization while reducing process complexity. Veeco´s CIGS deposition system can deposit the complete CIGS absorber layer in one system compared to other processes that require two to three systems. A CoO analysis will be provided that quantifies the CIGS system manufacturing productivity.
  • Keywords
    III-V semiconductors; copper compounds; cost reduction; elemental semiconductors; gallium arsenide; indium compounds; semiconductor device manufacture; solar cells; vapour deposition; CIGS cost of ownership; high volume copper indium gallium selenide manufacturing; high volume thermal deposition systems; low capital expenditures; material utilization; multizone deposition system; process complexity reduction; process optimization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5615824
  • Filename
    5615824