DocumentCode
2761661
Title
Driving down CIGS cost of ownership with high volume thermal deposition systems
Author
Patrin, John ; Conroy, Chad ; Wen, Jian-gang ; Brown, Doup ; Pfeiffer, Ken ; Fobare, David ; Novak, Jennifer ; Amadon, Jeff ; Metacarpa, Dave
Author_Institution
Veeco Instrum. Inc., St. Paul, MN, USA
fYear
2010
fDate
20-25 June 2010
Abstract
One of the biggest challenges for high volume copper indium gallium (di)Selenide (CIGS) manufacturing is transitioning the R&D/pilot processes to a low cost high volume manufacturing process. The most important parameters in lowering the manufacturing cost of ownership (CoO) are module efficiency, low materials cost, high throughput and low capital expenditures. Veeco has developed a CIGS thermal deposition system that incorporates a multi-zone deposition system that enables process optimization for high module efficiency and high throughput. Further manufacturing cost reductions have been achieved by incorporating an innovative linear thermal deposition source for copper (Cu), indium (In), gallium (Ga) and selenium (Se). The linear source dramatically increases material utilization while reducing process complexity. Veeco´s CIGS deposition system can deposit the complete CIGS absorber layer in one system compared to other processes that require two to three systems. A CoO analysis will be provided that quantifies the CIGS system manufacturing productivity.
Keywords
III-V semiconductors; copper compounds; cost reduction; elemental semiconductors; gallium arsenide; indium compounds; semiconductor device manufacture; solar cells; vapour deposition; CIGS cost of ownership; high volume copper indium gallium selenide manufacturing; high volume thermal deposition systems; low capital expenditures; material utilization; multizone deposition system; process complexity reduction; process optimization;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5615824
Filename
5615824
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