Title :
Demonstration of an electrically functional 34 nm metal pitch interconnect in ultralow-k ILD using spacer-based pitch quartering
Author :
van Veenhuizen, M. ; Allen, G. ; Harmes, M. ; Indukuri, T. ; Jezewski, C. ; Krist, B. ; Lang, H. ; Myers, A. ; Schenker, R. ; Singh, K.J. ; Turkot, R. ; Yoo, H.J.
Author_Institution :
Components Res., Intel Corp., Hillsboro, OR, USA
Abstract :
The patterning of a 34 nm metal pitch interconnect was realized using a spacer-based pitch quartering scheme. The pattern is transferred into an ultralow-k ILD using a process that avoids ILD buckling and structure collapse. Resulting features were metallized with copper, and electrically characterized. Measurement results show expected trends with drawn dimensions.
Keywords :
low-k dielectric thin films; metallisation; drawn dimensions; electrical functional metal pitch inteconnection; size 34 nm; spacer-based pitch quartering scheme; ultralow-k ILD; Abstracts; Image coding; Optical imaging; Wires;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251665
