Improved statistical analysis at low failure rates in Cu electromigration using an innovative multilink test structure

Author

Bana, F. ; Ney, D. ; Arnaud, L. ; Wouters, Y.

Author_Institution

STMicroelectron., Crolles, France

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

3

Abstract

An innovative electromigration test structure is described in this paper. This new structure consisting of serial connected links is designed to address very early percentiles of lognormal electromigration failure time distribution and highlight extrinsic failures. The simplicity of implementation, data treatment and the correlation with elemental dual damascene test lines make this structure a pretty good candidate for the future of interconnects reliability.

Keywords

copper; electromigration; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; statistical analysis; Cu; data treatment; elemental dual damascene test line; highlight extrinsic failure; innovative electromigration test structure; innovative multilink test structure; interconnection reliability; lognormal electromigration failure time rate distribution; serial connected link design; statistical analysis; Cathodes; Electromigration; Electron mobility; Integrated circuit interconnections; Reliability; Resistance; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2012 IEEE International

Conference_Location

San Jose, CA

ISSN

pending

Print_ISBN

978-1-4673-1138-0

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IITC.2012.6251668

Filename

6251668