Title :
Improved statistical analysis at low failure rates in Cu electromigration using an innovative multilink test structure
Author :
Bana, F. ; Ney, D. ; Arnaud, L. ; Wouters, Y.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
An innovative electromigration test structure is described in this paper. This new structure consisting of serial connected links is designed to address very early percentiles of lognormal electromigration failure time distribution and highlight extrinsic failures. The simplicity of implementation, data treatment and the correlation with elemental dual damascene test lines make this structure a pretty good candidate for the future of interconnects reliability.
Keywords :
copper; electromigration; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; statistical analysis; Cu; data treatment; elemental dual damascene test line; highlight extrinsic failure; innovative electromigration test structure; innovative multilink test structure; interconnection reliability; lognormal electromigration failure time rate distribution; serial connected link design; statistical analysis; Cathodes; Electromigration; Electron mobility; Integrated circuit interconnections; Reliability; Resistance; Stress;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251668
