DocumentCode :
2761820
Title :
Electrical and structural characterization of 150 nm CNT contacts with Cu damascene top metallization
Author :
Van der Veen, Marleen H. ; Vereecke, Bart ; Sugiura, Masahito ; Kashiwagi, Yusaku ; Ke, Xiaoxing ; Cott, Daire J. ; Vanpaemel, Johannes K M ; Vereecken, Philippe M. ; De Gendt, Stefan ; Huyghebaert, Cedric ; Tökei, Zsolt
Author_Institution :
imec, Leuven, Belgium
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
This paper discusses the electrical and structural characterization of 150 nm diameter contacts filled with carbon nanotubes (CNTs) and a Cu damascene top metal. We present the first images of CNTs in direct contact with the top metal. A CNT tip clean before metallization reduced the single CNT contact hole resistance from 4.8 kΩ down to 2.8 kΩ (aspect ratio 2.4). The first basic electrical breakdown experiments with Kelvins resulted in high breakdown currents of 5-13 MA/cm2.
Keywords :
carbon nanotubes; copper; electric breakdown; electrical contacts; semiconductor device metallisation; CNT contacts; Cu; Kelvins; carbon nanotubes; damascene top metallization; electrical breakdown; electrical contacts; resistance 2.8 kohm; resistance 4.8 kohm; size 150 nm; structural characterization; Contacts; Electric breakdown; Kelvin; Metallization; Resistance; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
ISSN :
pending
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IITC.2012.6251670
Filename :
6251670
Link To Document :
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