DocumentCode :
2761838
Title :
ZnO films prepared by two-step MOCVD process for use as front TCO in silicon-based thin film solar cells
Author :
Hongsingthong, Aswin ; Yunaz, Ihsanul Afdi ; Miyajima, Shinsuke ; Konagai, Makoto
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2010
fDate :
20-25 June 2010
Abstract :
In this paper, we report on ZnO films prepared by MOCVD technique with two-step deposition process. Effects of the thickness of the second layer were systematically investigated. It was found that with an increase in the thickness of the second layer, the surface morphology of multi-layer ZnO films show a mixture of both small spheres and a pyramid-like texture appeared on the surface. Furthermore, transmittance of the films increased remarkably. We also found that the electrical properties of the films slightly changed because overall electrical properties are mainly controlled by the first layer. Using multi-layer ZnO films with a thick second layer, we improved the transparency in the whole optical region of these films while preserving their good electrical properties.
Keywords :
III-V semiconductors; MOCVD; electric properties; solar cells; surface morphology; zinc compounds; TCO; ZnO; electrical properties; silicon-based thin film solar cells; surface morphology; two-step MOCVD process; two-step deposition process;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5615836
Filename :
5615836
Link To Document :
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