DocumentCode
2761838
Title
ZnO films prepared by two-step MOCVD process for use as front TCO in silicon-based thin film solar cells
Author
Hongsingthong, Aswin ; Yunaz, Ihsanul Afdi ; Miyajima, Shinsuke ; Konagai, Makoto
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2010
fDate
20-25 June 2010
Abstract
In this paper, we report on ZnO films prepared by MOCVD technique with two-step deposition process. Effects of the thickness of the second layer were systematically investigated. It was found that with an increase in the thickness of the second layer, the surface morphology of multi-layer ZnO films show a mixture of both small spheres and a pyramid-like texture appeared on the surface. Furthermore, transmittance of the films increased remarkably. We also found that the electrical properties of the films slightly changed because overall electrical properties are mainly controlled by the first layer. Using multi-layer ZnO films with a thick second layer, we improved the transparency in the whole optical region of these films while preserving their good electrical properties.
Keywords
III-V semiconductors; MOCVD; electric properties; solar cells; surface morphology; zinc compounds; TCO; ZnO; electrical properties; silicon-based thin film solar cells; surface morphology; two-step MOCVD process; two-step deposition process;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5615836
Filename
5615836
Link To Document