• DocumentCode
    2761898
  • Title

    N-type and P-type C-SI surface passivation by remote PECVD AlOx for solar cells

  • Author

    Shang, Quanyuan ; Seaman, Walter ; Whitney, Mike ; George, Mark ; Madocks, John ; Ahrenkiel, Richard

  • Author_Institution
    Gen. Plasma Inc., Tucson, AZ, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    A magnetically enhanced remote plasma source is applied to deposit AlOx thin films for crystalline solar cell passivation. High deposition rate and stable high surface charge density are reported. Significant lifetime increase is reported for both backside passivation on p-type solar cell and front side passivation on n-type solar cell. With its unique linear architecture, this technology could be the next enabler for AlOx passivation in solar cell manufacturing.
  • Keywords
    aluminium compounds; passivation; plasma CVD; semiconductor thin films; solar cells; AlOx; crystalline solar cell passivation; magnetically enhanced remote plasma source; n-type solar cell; p-type solar cell; surface charge density; thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5615839
  • Filename
    5615839
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2761898