DocumentCode :
2761898
Title :
N-type and P-type C-SI surface passivation by remote PECVD AlOx for solar cells
Author :
Shang, Quanyuan ; Seaman, Walter ; Whitney, Mike ; George, Mark ; Madocks, John ; Ahrenkiel, Richard
Author_Institution :
Gen. Plasma Inc., Tucson, AZ, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
A magnetically enhanced remote plasma source is applied to deposit AlOx thin films for crystalline solar cell passivation. High deposition rate and stable high surface charge density are reported. Significant lifetime increase is reported for both backside passivation on p-type solar cell and front side passivation on n-type solar cell. With its unique linear architecture, this technology could be the next enabler for AlOx passivation in solar cell manufacturing.
Keywords :
aluminium compounds; passivation; plasma CVD; semiconductor thin films; solar cells; AlOx; crystalline solar cell passivation; magnetically enhanced remote plasma source; n-type solar cell; p-type solar cell; surface charge density; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5615839
Filename :
5615839
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2761898
بازگشت