Application of CL/EBIC-SEM techniques for characterization of irradiation induced defects in triple junction solar cells

Author

Maximenko, S.I. ; Messenger, S.R. ; Cress, C. ; Gonzalez, M. ; Freitas, J.A., Jr. ; Walters, Robert J.

Author_Institution

Global Defense Technol. & Syst., Inc., Crofton, MD, USA

fYear

2010

fDate

20-25 June 2010

Abstract

We report the results of the characterization of irradiated InGaP₂/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell triple junction structure and correlate illuminated (AM0, 1 sun, 25°C) current-voltage (IV) and quantum efficiency (QE) characteristics.

Keywords

EBIC; III-V semiconductors; cathodoluminescence; elemental semiconductors; gallium arsenide; germanium; indium compounds; radiation effects; scanning electron microscopy; semiconductor junctions; solar cells; CL-EBIC-SEM technique; InGaP₂-GaAs-Ge; cathodoluminescence imaging; cathodoluminescence spectroscopy; electron beam induced current mode; illuminated current-voltage characteristic; irradiated multijunction solar cell; irradiation induced defect characterization; monolithic triple junction structure; optoelectronic property; quantum efficiency characteristic; scanning electron microscopy; subcell; triple junction solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5615869

Filename

5615869