Title :
Be doping of InP and GaInAs during metalorganic molecular beam epitaxy
Author :
Ritter, D. ; Hamm, R.A. ; Panish, M.B. ; Geva, M.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
The results of Hall, secondary ion mass spectrometry (SIMs), and photoluminescence (PL) measurements carried out on Be doped InP and Ga 0.47In0.53As samples grown by metalorganic molecular beam epitaxy (MOMBE) are presented. It is shown that Be redistribution in InP occurs at all doping levels, whereas in Ga0.47In0.53As, there is little or no Be redistribution up to a level of at least 2×1019 cm-3. The Be doping efficiency is found to be 2.5 times smaller for InP than for Ga0.47In0.53As. This effect is attributed to the formation of a Be-organic compound on the growing surface with a shorter residence time on InP than on Ga0.47 In0.53As. It is suggested that Be carbide formation in the effusion cells is responsible for a significant reduction in the Be effusion rate. PL studies of Be doped Ga0.47In0.53As samples indicate that Be concentrations in the 1017 cm-3 range do not significantly reduce the PL intensity, but that higher Be concentrations do
Keywords :
Hall effect; III-V semiconductors; beryllium; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; secondary ion mass spectroscopy; semiconductor doping; Be effusion rate; Be redistribution; Be-organic compound; Hall measurements; MOMBE; PL intensity; doping efficiency; metalorganic molecular beam epitaxy; photoluminescence; secondary ion mass spectrometry; semiconductors; Doping profiles; Epitaxial growth; Indium phosphide; Mass spectroscopy; Molecular beam epitaxial growth; Shape; Solids; Substrates; Temperature dependence; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147391
