A snap-back suppressed shorted-anode lateral trench insulated gate bipolar transistor (LTIGBT) with insulated trench collector

Author

Oh, Juhyun ; Chun, Dae Hwan ; Oh, Reum ; Kim, Hyun Soo

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

fYear

2011

fDate

27-30 June 2011

Firstpage

1367

Lastpage

1370

Abstract

A shorted anode insulated gate bipolar transistor (SA-LIGBT) has a negative differential resistance (NDR) region that causes undesirable operation of the device and increases the on-state voltage drop. We propose a lateral trench gate IGBT (LTIGBT) structure that has an insulated trench collector. The insulated trench collector can be formed when the trench gate is formed. The insulated trench collector reduces the NDR region without stretching the width of the device. The proposed SA-LTIGBT has a lower snap-back voltage than conventional SA-LTIGBT. The breakdown voltage and turn-off time do not degenerate, in contrast to a conventional SA-LTIGBT. We analyzed the proposed device using two-dimensional numerical simulation.

Keywords

electric breakdown; electric potential; insulated gate bipolar transistors; numerical analysis; LTIGBT; breakdown voltage; insulated trench collector; lateral trench insulated gate bipolar transistor; negative differential resistance region; on-state voltage drop; shorted-anode insulated gate bipolar transistor; snap-back suppressed; snap-back voltage; two-dimensional numerical simulation; Electric breakdown; Electric fields; Insulated gate bipolar transistors; Logic gates; MOSFET circuits; Numerical simulation; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics (ISIE), 2011 IEEE International Symposium on

Conference_Location

Gdansk

ISSN

Pending

Print_ISBN

978-1-4244-9310-4

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/ISIE.2011.5984358

Filename

5984358