DocumentCode
2762465
Title
Application of X-ray computed tomography in silicon solar cells
Author
POpovich, VA ; Verwaal, W. ; Janssen, M. ; Bennett, I.J. ; Richardson, I.M.
Author_Institution
Dept. of Mater. Sci. & Eng., Delft Univ. of Technol., Delft, Netherlands
fYear
2010
fDate
20-25 June 2010
Abstract
The present study outlines the characterization of the internal microstructure in a multicrystalline silicon solar cell, by means of a powerful non-intrusive experimental method, namely X-ray computed tomography. The purpose of this research is to give a better understanding of the silicon solar cells metallization layers and defects related to its processing. Resulting tomographic images showed the distribution of bismuth glass and porosity in Al and Ag contact layers. At the same time, 3D tomographic images revealed the presence of process induced defects. In this work the usefulness of the CT technique for the in depth study of silicon solar cells is shown.
Keywords
X-ray imaging; aluminium; computerised tomography; elemental semiconductors; metallisation; silicon; silver; solar cells; 3D tomographic images; Ag; Al; X-ray computed tomography; bismuth glass; contact layers; internal microstructure; metallization layers; multicrystalline silicon solar cells; process induced defects;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5615872
Filename
5615872
Link To Document