DocumentCode :
2762465
Title :
Application of X-ray computed tomography in silicon solar cells
Author :
POpovich, VA ; Verwaal, W. ; Janssen, M. ; Bennett, I.J. ; Richardson, I.M.
Author_Institution :
Dept. of Mater. Sci. & Eng., Delft Univ. of Technol., Delft, Netherlands
fYear :
2010
fDate :
20-25 June 2010
Abstract :
The present study outlines the characterization of the internal microstructure in a multicrystalline silicon solar cell, by means of a powerful non-intrusive experimental method, namely X-ray computed tomography. The purpose of this research is to give a better understanding of the silicon solar cells metallization layers and defects related to its processing. Resulting tomographic images showed the distribution of bismuth glass and porosity in Al and Ag contact layers. At the same time, 3D tomographic images revealed the presence of process induced defects. In this work the usefulness of the CT technique for the in depth study of silicon solar cells is shown.
Keywords :
X-ray imaging; aluminium; computerised tomography; elemental semiconductors; metallisation; silicon; silver; solar cells; 3D tomographic images; Ag; Al; X-ray computed tomography; bismuth glass; contact layers; internal microstructure; metallization layers; multicrystalline silicon solar cells; process induced defects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5615872
Filename :
5615872
Link To Document :
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