• DocumentCode
    2762465
  • Title

    Application of X-ray computed tomography in silicon solar cells

  • Author

    POpovich, VA ; Verwaal, W. ; Janssen, M. ; Bennett, I.J. ; Richardson, I.M.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    The present study outlines the characterization of the internal microstructure in a multicrystalline silicon solar cell, by means of a powerful non-intrusive experimental method, namely X-ray computed tomography. The purpose of this research is to give a better understanding of the silicon solar cells metallization layers and defects related to its processing. Resulting tomographic images showed the distribution of bismuth glass and porosity in Al and Ag contact layers. At the same time, 3D tomographic images revealed the presence of process induced defects. In this work the usefulness of the CT technique for the in depth study of silicon solar cells is shown.
  • Keywords
    X-ray imaging; aluminium; computerised tomography; elemental semiconductors; metallisation; silicon; silver; solar cells; 3D tomographic images; Ag; Al; X-ray computed tomography; bismuth glass; contact layers; internal microstructure; metallization layers; multicrystalline silicon solar cells; process induced defects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5615872
  • Filename
    5615872