Title :
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects
Author :
Crupi, Giovanni ; Raffo, Antonio ; Schreurs, Dominique M M -P ; Avolio, Gustavo ; Vadalà, Valeria ; Falco, Sergio Di ; Caddemi, Alina ; Vannini, Giorgio
Author_Institution :
Dipt. di Fis. della Materia e Ing. Elettron., Univ. of Messina, Messina, Italy
Abstract :
The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power amplifier design. In particular, the model should be able to reproduce the microwave device behaviour under realistic operating conditions. In light of that, we present a technique for extracting a large-signal GaN HEMT equivalent circuit, which includes both low-frequency dispersive phenomena and high-frequency non-quasi-static effects.
Keywords :
equivalent circuits; gallium compounds; high electron mobility transistors; power amplifiers; semiconductor device models; GaN; GaN HEMT large-signal model; equivalent circuit; high-frequency nonquasistatic effect; high-power amplifier; low-frequency dispersion; microwave device; Current measurement; Dispersion; Gallium nitride; HEMTs; Microwave amplifiers; Microwave transistors; Gallium nitride (GaN) high electron-mobility transistor (HEMT); microwave large-signal measurements; scattering parameter measurements; semiconductor device modelling;
Conference_Titel :
Telecommunication in Modern Satellite Cable and Broadcasting Services (TELSIKS), 2011 10th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4577-2018-5
DOI :
10.1109/TELSKS.2011.6112041
