Title :
The application of ion-beam mixing, doped silicide, and rapid thermal processing to self-aligned silicide technology
Author :
Ku, Y.H. ; Lee, S.K. ; Ting, W. ; Kwong, D.L.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
The authors have developed a salicide process for CMOS (complementary metal-oxide-semiconductor) applications using ion beam mixing for silicide formation and doped silicide in conjunction with RTA (rapid thermal annealing) drive-in for shallow silicided junction formation and have investigated the fundamental issues related to this process. Specifically, they have studied (i) the effects of ion-beam mixing and RTA on the properties of Ti salicide and the interaction between Ti and SiO2; (ii) self-aligned TiNxOy /TiSi2 formation and phase transformation (iii) the mechanism of impurity redistribution and segregation and of junction formation during RTA drive-in; and (iv) the performance and reliability of fabricated salicide devices. Results show that this process may have a great impact on future VLSI (very-large-scale integration) technology
Keywords :
CMOS integrated circuits; VLSI; impurity distribution; incoherent light annealing; integrated circuit technology; ion beam mixing; metallisation; CMOS; RTA; Ti-SiO2; TiNxOy-TiSi2; VLSI; doped silicide; impurity redistribution; ion-beam mixing; phase transformation; rapid thermal processing; reliability; salicide process; segregation; self-aligned silicide technology; shallow silicided junction formation; Annealing; Application software; Impurities; Rapid thermal processing; Rough surfaces; Silicides; Silicon; Surface roughness; Temperature; Titanium;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68641
