Characterization and modeling of accumulation-mode MOS varactors

Author

Sameni, Pedram ; Siu, Chris ; Iniewski, Krzysztof ; Mirabbasi, Shahriar ; Djahanshahi, H. ; Hamour, Marwa ; Chana, Jatinder

Author_Institution

Dept. of Electr. & Comput. Eng., British Columbia Univ.

fYear

2005

fDate

1-4 May 2005

Firstpage

1554

Lastpage

1557

Abstract

The characterization and modeling of an accumulation-mode MOS varactor implemented in a standard 0.13 mum CMOS process is discussed. An experimental model based on the physical parameters of the device is verified. The model has been extracted, using S-parameter measurements, from different MOS varactor structures and is valid in both accumulation and depletion regions. The model has been verified both directly using the extracted values and indirectly by comparing the measured and simulated tuning curves of 5-6 GHz voltage controlled oscillators designed in the same process

Keywords

CMOS integrated circuits; MIS devices; S-parameters; microwave oscillators; varactors; voltage-controlled oscillators; 5 to 6 GHz; CMOS process; S-parameter measurements; accumulation-mode MOS varactors; voltage controlled oscillators; CMOS process; CMOS technology; MOS devices; MOSFETs; Scattering parameters; Semiconductor device modeling; Tuning; Varactors; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2005. Canadian Conference on

Conference_Location

Saskatoon, Sask.

ISSN

0840-7789

Print_ISBN

0-7803-8885-2

Type

conf

DOI

10.1109/CCECE.2005.1557277

Filename

1557277