DocumentCode :
2762810
Title :
Boron - nitrogen interactions in liquid silicon
Author :
Dalaker, H. ; Tangstad, M.
Author_Institution :
SINTEF Mater. & Chem., Trondheim, Norway
fYear :
2010
fDate :
20-25 June 2010
Abstract :
The interactions of boron and nitrogen in liquid silicon have been investigated experimentally. The effect of these interactions on the solubility limit of nitrogen in liquid silicon has been examined, and the precipitation of BN-particles is also discussed. Silicon has been melted in Si3N4-crucibles and samples extracted using quartz tubes and a syringe. Prior to melting, 0.1 or 1.5 wt% boron were added to the silicon feedstock. The rapidly quenched samples have been analysed for nitrogen-content using Leco™, and Arrhenius-expressions describing the nitrogen content as functions of temperature were derived for the different boron levels. When comparing the obtained nitrogen contents with results previous results published by the current authors for the pure Si - N-system, it is clear that the presence of boron affects the solubility limit, with much lower levels of nitrogen being detected in the boron-doped samples.
Keywords :
boron; elemental semiconductors; liquid semiconductors; nitrogen; precipitation (physical chemistry); quenching (thermal); silicon; solubility; Arrhenius-expressions; B; N2; Si; boron-nitrogen interactions; liquid silicon; precipitation; rapid quenching; solubility limit;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5615892
Filename :
5615892
Link To Document :
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