DocumentCode
2763156
Title
[Front matter]
fYear
2006
fDate
15-17 May 2006
Abstract
The following topics are dealt with: strained Si FET/CMOS and technology; germanium device technology; optoelectronics and Ge FETs; Ge MIS/MOS technology; selective epitaxy; heterostructure growth; quantum devices; virtual substrates; heterojunction bipolar transistors; semiconductor process technology
Keywords
MIS devices; elemental semiconductors; field effect transistors; germanium; heterojunction bipolar transistors; optoelectronic devices; semiconductor technology; silicon; CMOS device; FET device; Ge; HBT circuits; HBT devices; MIS technology; MOS technology; Si; heterojunction bipolar transistors; heterostructure growth; optoelectronics; quantum devices; selective epitaxy; virtual substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246567
Filename
1715936
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