Abstract :
The following topics are dealt with: strained Si FET/CMOS and technology; germanium device technology; optoelectronics and Ge FETs; Ge MIS/MOS technology; selective epitaxy; heterostructure growth; quantum devices; virtual substrates; heterojunction bipolar transistors; semiconductor process technology
Keywords :
MIS devices; elemental semiconductors; field effect transistors; germanium; heterojunction bipolar transistors; optoelectronic devices; semiconductor technology; silicon; CMOS device; FET device; Ge; HBT circuits; HBT devices; MIS technology; MOS technology; Si; heterojunction bipolar transistors; heterostructure growth; optoelectronics; quantum devices; selective epitaxy; virtual substrates;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246567
