Numerical modeling of hot electron GaAs/AlxGa1−xAs quantum well photovoltaic

The effects of carrier escape from quantum well (QW) and the interaction of hot electrons with crystal lattice are investigated in GaAs/Al_xGa_1-xAs QW hot carrier solar cells where the cooling dynamics in photo-excited structures affect the cell efficiency. For modeling and characterization of quantum well hot electron solar cells the thermionic emission theory of heterostructures coupled with energy balance and non-isothermal drift diffusion equations are solved numerically. Simulation data show that hot carriers escape from multi quantum well results in a higher maximum conversion point in structures with long energy relaxation lifetime which may lead to a higher efficiency in hot electron solar cells.