Title :
Energy band structure and absorption coefficients in the quantum-dot intermediate band solar cells
Author :
Hu, W.G. ; Inoue, T. ; Kojima, O. ; Kita, T.
Author_Institution :
CREATE, Kobe Univ., Kobe, Japan
Abstract :
This paper describes a net generation balance model to study the qasi-Fermi level split and the intermediate band (IB) filling. Our simulations reveal that the QD state density is not enough high to pin the IB quasi-Fermi level (EfIB) at the position of the IB level (EIB), and the filling factor (f) is determined by the absorption-recombination process of sub-bandgap photons. In the quasi-uniform absorption (equivalent absorption coefficients), a rough approximation is that EfIB parallel with EIB, and is clamped in the equilibrium position. In the nonuniform absorption case (inequivalent absorption coefficients), our simulations suggest that optimizing αIC0/αVI0 ratio can effectively enhance the conversion efficiency.
Keywords :
Fermi level; band structure; electron-hole recombination; light absorption; quantum dots; solar cells; absorption-recombination process; energy band structure; equivalent absorption coefficients; inequivalent absorption coefficient; intermediate band filling; qasiFermi level split; quantum dot intermediate band solar cells; quantum dot state density; quasi-uniform absorption; sub-bandgap photons;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5615917