• DocumentCode
    2763271
  • Title

    Energy band structure and absorption coefficients in the quantum-dot intermediate band solar cells

  • Author

    Hu, W.G. ; Inoue, T. ; Kojima, O. ; Kita, T.

  • Author_Institution
    CREATE, Kobe Univ., Kobe, Japan
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    This paper describes a net generation balance model to study the qasi-Fermi level split and the intermediate band (IB) filling. Our simulations reveal that the QD state density is not enough high to pin the IB quasi-Fermi level (EfIB) at the position of the IB level (EIB), and the filling factor (f) is determined by the absorption-recombination process of sub-bandgap photons. In the quasi-uniform absorption (equivalent absorption coefficients), a rough approximation is that EfIB parallel with EIB, and is clamped in the equilibrium position. In the nonuniform absorption case (inequivalent absorption coefficients), our simulations suggest that optimizing αIC0/αVI0 ratio can effectively enhance the conversion efficiency.
  • Keywords
    Fermi level; band structure; electron-hole recombination; light absorption; quantum dots; solar cells; absorption-recombination process; energy band structure; equivalent absorption coefficients; inequivalent absorption coefficient; intermediate band filling; qasiFermi level split; quantum dot intermediate band solar cells; quantum dot state density; quasi-uniform absorption; sub-bandgap photons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5615917
  • Filename
    5615917