DocumentCode :
2763271
Title :
Energy band structure and absorption coefficients in the quantum-dot intermediate band solar cells
Author :
Hu, W.G. ; Inoue, T. ; Kojima, O. ; Kita, T.
Author_Institution :
CREATE, Kobe Univ., Kobe, Japan
fYear :
2010
fDate :
20-25 June 2010
Abstract :
This paper describes a net generation balance model to study the qasi-Fermi level split and the intermediate band (IB) filling. Our simulations reveal that the QD state density is not enough high to pin the IB quasi-Fermi level (EfIB) at the position of the IB level (EIB), and the filling factor (f) is determined by the absorption-recombination process of sub-bandgap photons. In the quasi-uniform absorption (equivalent absorption coefficients), a rough approximation is that EfIB parallel with EIB, and is clamped in the equilibrium position. In the nonuniform absorption case (inequivalent absorption coefficients), our simulations suggest that optimizing αIC0VI0 ratio can effectively enhance the conversion efficiency.
Keywords :
Fermi level; band structure; electron-hole recombination; light absorption; quantum dots; solar cells; absorption-recombination process; energy band structure; equivalent absorption coefficients; inequivalent absorption coefficient; intermediate band filling; qasiFermi level split; quantum dot intermediate band solar cells; quantum dot state density; quasi-uniform absorption; sub-bandgap photons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5615917
Filename :
5615917
Link To Document :
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