Title :
p-n Junction Leakage Current in Strained-Si/SGOI Diodes
Author :
Tanabe, A. ; Numata, T. ; Tezuka, Taro ; Hirashita, N. ; Takagi, Shinichi
Author_Institution :
Assoc. of Super-Adv. Electron. Technol. (ASET), MIRAJ, Kawasaki
Abstract :
In this paper, the origin of p-n junction leakage current in s-Si/SGOI diodes is investigated. It is found that generation current by bulk trap is dominant in the s-Si/SGOI p-n junction leakage current compared to diffusion current and generation current by oxide interface state and that the calculated leakage current is low enough even in Ge-on-insulator (GOI) channels at hp45 nm technology node
Keywords :
elemental semiconductors; germanium; leakage currents; p-n junctions; semiconductor diodes; semiconductor-insulator boundaries; silicon; SGOI diodes; bulk trap; diffusion current; generation current; germanium-on-insulator; oxide interface state; p-n junction leakage current; Germanium silicon alloys; Interface states; Leakage current; MOSFETs; P-n junctions; Photonic band gap; Semiconductor diodes; Silicon germanium; Silicon on insulator technology; Temperature dependence;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246573
