Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions

Author

Gonzalez, M.B. ; Eneman, Geert ; Verheyen, P. ; Claeys, Cor ; Benedetti, A. ; Bender, Hugo ; De Meyer, K. ; Simoen, Eddy ; Schreutelkamp, R. ; Washington, L. ; Nouri, F.

Author_Institution

IMEC, Leuven

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

Here, a systematic study is made of the leakage current in huge-area SiGe-Si p⁺-n junctions. As will be shown, both the perimeter and area leakage current density are a sensitive function of the S/D etch depth, whereby a higher leakage is obtained for deeper trenches. This can be explained by the presence of dislocations at the SiGe-Si interface, as revealed by transmission electron microscopy (TEM) and their relative distance to the electrical junction

Keywords

Ge-Si alloys; elemental semiconductors; etching; leakage currents; p-n junctions; silicon; S-D etch depth; SiGe-Si; TEM; electrical junction; etching depth; leakage current; p⁺-n junctions; transmission electron microscopy; Annealing; Capacitance-voltage characteristics; Compressive stress; Diodes; Dry etching; Germanium silicon alloys; Leakage current; Scanning electron microscopy; Silicon germanium; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246574

Filename

1715943