Title :
Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions
Author :
Gonzalez, M.B. ; Eneman, Geert ; Verheyen, P. ; Claeys, Cor ; Benedetti, A. ; Bender, Hugo ; De Meyer, K. ; Simoen, Eddy ; Schreutelkamp, R. ; Washington, L. ; Nouri, F.
Author_Institution :
IMEC, Leuven
Abstract :
Here, a systematic study is made of the leakage current in huge-area SiGe-Si p+-n junctions. As will be shown, both the perimeter and area leakage current density are a sensitive function of the S/D etch depth, whereby a higher leakage is obtained for deeper trenches. This can be explained by the presence of dislocations at the SiGe-Si interface, as revealed by transmission electron microscopy (TEM) and their relative distance to the electrical junction
Keywords :
Ge-Si alloys; elemental semiconductors; etching; leakage currents; p-n junctions; silicon; S-D etch depth; SiGe-Si; TEM; electrical junction; etching depth; leakage current; p+-n junctions; transmission electron microscopy; Annealing; Capacitance-voltage characteristics; Compressive stress; Diodes; Dry etching; Germanium silicon alloys; Leakage current; Scanning electron microscopy; Silicon germanium; Transmission electron microscopy;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246574
