Title :
Germanide phase formation and texture
Author :
Gaudet, S. ; Lavoie, C. ; Detavernier, C. ; Desjardins, Pierre
Author_Institution :
Departement de gdnie Phys., Ecole Polytechnique de Montreal, Que.
Abstract :
The aim of the present study was to complete a systematic investigation of metal-germanium reactions to isolate promising candidates for contacting Ge-based microelectronic devices. Based on their low formation temperature, low resistivity, limited film roughness, sufficient morphological stability, and limited sensitivity to oxidation, NiGe and PdGe were found to be the most promising candidates. These materials are, however, subject to low temperature thermal degradation; therefore, they would probably require stabilization through alloying
Keywords :
elemental semiconductors; germanium; nickel compounds; palladium compounds; semiconductor thin films; semiconductor-metal boundaries; surface morphology; surface roughness; NiGe; PdGe; alloying process; germanide phase formation; germanide phase texture; limited film roughness; limited sensitivity; low formation temperature; low resistivity; low temperature thermal degradation; metal-germanium reactions; microelectronic devices; sufficient morphological stability; Annealing; Circuits; Conductivity; Hafnium; Iron; Microelectronics; Niobium; Temperature; X-ray scattering; Zirconium;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246575
