Germanide phase formation and texture

Author

Gaudet, S. ; Lavoie, C. ; Detavernier, C. ; Desjardins, Pierre

Author_Institution

Departement de gdnie Phys., Ecole Polytechnique de Montreal, Que.

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

The aim of the present study was to complete a systematic investigation of metal-germanium reactions to isolate promising candidates for contacting Ge-based microelectronic devices. Based on their low formation temperature, low resistivity, limited film roughness, sufficient morphological stability, and limited sensitivity to oxidation, NiGe and PdGe were found to be the most promising candidates. These materials are, however, subject to low temperature thermal degradation; therefore, they would probably require stabilization through alloying

Keywords

elemental semiconductors; germanium; nickel compounds; palladium compounds; semiconductor thin films; semiconductor-metal boundaries; surface morphology; surface roughness; NiGe; PdGe; alloying process; germanide phase formation; germanide phase texture; limited film roughness; limited sensitivity; low formation temperature; low resistivity; low temperature thermal degradation; metal-germanium reactions; microelectronic devices; sufficient morphological stability; Annealing; Circuits; Conductivity; Hafnium; Iron; Microelectronics; Niobium; Temperature; X-ray scattering; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246575

Filename

1715944