Title :
Accurate Modelling of Average Phosphorus Diffusivities in Germanium after Long Thermal Anneals
Author :
Carroll, Mariana ; Koudelka, R.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Abstract :
In summary, phosphorus diffusivities in germanium were measured after long anneals at temperatures between 600degC and 800degC. The diffusivities are extrinsic (i.e., D ~ (n/ni)2) but are slower than recently reported extrinsic diffusivities and a slightly larger activation energy is also measured in this work than the previous work. Using a diffusion model that includes a segregation term between the cap oxide and the germanium combined with a peak solid solubility of 3times1019 cm-3 good fits to the experimental profiles were obtained
Keywords :
annealing; doping profiles; elemental semiconductors; germanium; phosphorus; semiconductor doping; 600 to 800 C; Ge:P; activation energy; cap oxide; diffusion model; extrinsic diffusivities; germanium; phosphorus diffusivities; segregation term; solid solubility; thermal annealing; Energy measurement; Germanium; Hydrogen; Implants; Numerical simulation; Optical device fabrication; Plasma temperature; Rapid thermal annealing; Solids; Temperature measurement;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246576