Accurate Modelling of Average Phosphorus Diffusivities in Germanium after Long Thermal Anneals

Author

Carroll, Mariana ; Koudelka, R.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

In summary, phosphorus diffusivities in germanium were measured after long anneals at temperatures between 600degC and 800degC. The diffusivities are extrinsic (i.e., D ~ (n/n_i)²) but are slower than recently reported extrinsic diffusivities and a slightly larger activation energy is also measured in this work than the previous work. Using a diffusion model that includes a segregation term between the cap oxide and the germanium combined with a peak solid solubility of 3times10¹⁹ cm^-3 good fits to the experimental profiles were obtained

Keywords

annealing; doping profiles; elemental semiconductors; germanium; phosphorus; semiconductor doping; 600 to 800 C; Ge:P; activation energy; cap oxide; diffusion model; extrinsic diffusivities; germanium; phosphorus diffusivities; segregation term; solid solubility; thermal annealing; Energy measurement; Germanium; Hydrogen; Implants; Numerical simulation; Optical device fabrication; Plasma temperature; Rapid thermal annealing; Solids; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246576

Filename

1715945