• DocumentCode
    2763342
  • Title

    Strained Pt Schottky Diodes on n-type Si and Ge

  • Author

    Liao, M.H. ; Chang, S.T. ; Kuo, Paulina S. ; Wu, H.T. ; Peng, Chu-Yun ; Liu, C.W.

  • Author_Institution
    Dept. of Electr. Eng., National Taiwan Univ., Taipei
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In summary, the reduction of the Schottky-barrier height for the n-type semiconductor under external mechanical strain is observed. This reduction is shown to originate from the reduction of conduction band edge. The boundary condition under uniaxial strain technology is stress-free along the direction perpendicular to uniaxial stress obtain the reasonable agreement between data and theoretical calculation
  • Keywords
    Schottky barriers; Schottky diodes; elemental semiconductors; germanium; platinum; silicon; stress effects; Ge; Schottky diodes; Schottky-barrier height; Si; conduction band edge; external mechanical strain; n-type semiconductors; uniaxial strain technology; uniaxial stress; Capacitance-voltage characteristics; Capacitive sensors; Mechanical variables measurement; Raman scattering; Schottky barriers; Schottky diodes; Semiconductor diodes; Strain measurement; Tensile strain; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246577
  • Filename
    1715946
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2763342