Title :
Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs
Author :
Kazazis, D. ; Zaslavsky, A. ; Tutuc, Emanuel ; Bojarczuk, N.A. ; Guha, Saikat
Author_Institution :
Div. of Eng., Brown Univ., Providence, RI
Abstract :
We report on ambipolar GeOI FETs fabricated on ultra-thin films of single crystal Ge, epitaxially grown on a high-k crystalline lanthanum-yttrium-oxide lattice matched to Si (111) substrate. The GeOI FETs show promising transistor characteristics at room temperature, while at low temperatures they exhibit negative differential resistance (NDR) in the drain current circuit
Keywords :
elemental semiconductors; epitaxial growth; field effect transistors; germanium; negative resistance devices; semiconductor thin films; semiconductor-insulator boundaries; silicon; FET device; Ge; drain current circuit; epitaxial growth; germanium-on-insulator; high-k crystalline lanthanum-yttrium-oxide lattice; negative differential resistance; silicon substrate; ultra-thin films; Crystalline materials; Crystallization; Dielectric substrates; Etching; FETs; High K dielectric materials; High-K gate dielectrics; Lattices; Optical device fabrication; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246578
