DocumentCode
2763361
Title
Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs
Author
Kazazis, D. ; Zaslavsky, A. ; Tutuc, Emanuel ; Bojarczuk, N.A. ; Guha, Saikat
Author_Institution
Div. of Eng., Brown Univ., Providence, RI
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
We report on ambipolar GeOI FETs fabricated on ultra-thin films of single crystal Ge, epitaxially grown on a high-k crystalline lanthanum-yttrium-oxide lattice matched to Si (111) substrate. The GeOI FETs show promising transistor characteristics at room temperature, while at low temperatures they exhibit negative differential resistance (NDR) in the drain current circuit
Keywords
elemental semiconductors; epitaxial growth; field effect transistors; germanium; negative resistance devices; semiconductor thin films; semiconductor-insulator boundaries; silicon; FET device; Ge; drain current circuit; epitaxial growth; germanium-on-insulator; high-k crystalline lanthanum-yttrium-oxide lattice; negative differential resistance; silicon substrate; ultra-thin films; Crystalline materials; Crystallization; Dielectric substrates; Etching; FETs; High K dielectric materials; High-K gate dielectrics; Lattices; Optical device fabrication; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246578
Filename
1715947
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