III-V/Si Device Integration Via Metamorphic SiGe Substrates

Author

Ringel, Steven A. ; Kwon, Oh-Kyong ; Lueck, M. ; Boeckl, J. ; Fitzgerald, E.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Columbus, OH

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

This paper presents growth, characterization and device results for III-V optoelectronic and solar cell heterostructure devices that have been monolithically integrated on Si via ultra low dislocation density SiGe interlayers. Prior work that has demonstrated high performance single junction solar cells (Andre et al., 2005) and visible wavelength LEDs (Kwon et al., 2005) on Si is extended here to include visible wavelength laser diodes and dual junction solar cells on Si in which AlGaInP materials are used as active layers on Si

Keywords

Ge-Si alloys; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optoelectronic devices; semiconductor growth; semiconductor lasers; solar cells; AlGaInP; III-V optoelectronic devices; SiGe; device integration; dislocation density; heterostructure devices; laser diodes; metamorphic substrates; solar cells; visible wavelength LED; Diode lasers; Gallium arsenide; Germanium silicon alloys; III-V semiconductor materials; Lattices; Light emitting diodes; Materials science and technology; Photovoltaic cells; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246582

Filename

1715951