Title :
III-V/Si Device Integration Via Metamorphic SiGe Substrates
Author :
Ringel, Steven A. ; Kwon, Oh-Kyong ; Lueck, M. ; Boeckl, J. ; Fitzgerald, E.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Columbus, OH
Abstract :
This paper presents growth, characterization and device results for III-V optoelectronic and solar cell heterostructure devices that have been monolithically integrated on Si via ultra low dislocation density SiGe interlayers. Prior work that has demonstrated high performance single junction solar cells (Andre et al., 2005) and visible wavelength LEDs (Kwon et al., 2005) on Si is extended here to include visible wavelength laser diodes and dual junction solar cells on Si in which AlGaInP materials are used as active layers on Si
Keywords :
Ge-Si alloys; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optoelectronic devices; semiconductor growth; semiconductor lasers; solar cells; AlGaInP; III-V optoelectronic devices; SiGe; device integration; dislocation density; heterostructure devices; laser diodes; metamorphic substrates; solar cells; visible wavelength LED; Diode lasers; Gallium arsenide; Germanium silicon alloys; III-V semiconductor materials; Lattices; Light emitting diodes; Materials science and technology; Photovoltaic cells; Silicon germanium; Substrates;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246582
